首頁晶振行業(yè)動態(tài) Connor-Winfield晶振自豪地成為美國重要的石英晶體計(jì)時(shí)產(chǎn)品和無線通信模塊制造商
Connor-Winfield晶振自豪地成為美國重要的石英晶體計(jì)時(shí)產(chǎn)品和無線通信模塊制造商
來源:http://m.eitherspanlaw.com 作者:億金電子 2022年06月10
Connor-Winfield晶振自豪地成為美國重要的石英晶體計(jì)時(shí)產(chǎn)品和無線通信模塊制造商,了解Connor-Winfield晶振及其相關(guān)方關(guān)注的內(nèi)部和外部問題,廣泛用于各種應(yīng)用,包括電信,數(shù)據(jù)通信,無線系統(tǒng),軍事,醫(yī)療和太空等
Connor-Winfield晶振通常采用ISO9000中提供的定義:質(zhì)量管理——基礎(chǔ)和詞匯。在某些情況下,特定程序或文件可能會提供不同的定義,以便在該文件的上下文中使用;在這種情況下,該定義將取代本質(zhì)量手冊或ISO9000中提供的定義。
Connor-Winfield晶振審查并分析了自身及其利益相關(guān)者的關(guān)鍵方面,以確定公司的戰(zhàn)略方向。這涉及:
了解我們的核心產(chǎn)品和管理體系的范圍
識別接收我們產(chǎn)品或可能受產(chǎn)品影響的“利益相關(guān)方”(利益相關(guān)方),或可能對我們公司有重大利益的各方。
了解Connor-Winfield晶振及其相關(guān)方關(guān)注的內(nèi)部和外部問題;也在COTO日志中確定。許多此類問題是通過分析康納-溫菲爾德或相關(guān)方面臨的風(fēng)險(xiǎn)來確定的。對此類問題進(jìn)行適當(dāng)?shù)谋O(jiān)控和更新,并作為管理評審的一部分進(jìn)行討論。
然后,高級管理層使用這些信息來確定公司的戰(zhàn)略方向。這在管理評審記錄中定義,并隨著條件和情況的變化定期更新。
基于對上述關(guān)注問題、利益相關(guān)者利益的分析,并考慮到其提供的產(chǎn)品和服務(wù),康納溫菲爾德確定了質(zhì)量管理體系的范圍如下:
基于晶體、厚膜和PCB的頻率控制設(shè)備的設(shè)計(jì)和制造。Toll制造的半導(dǎo)體設(shè)備的設(shè)計(jì)和測試。電子組件和相關(guān)服務(wù)的合同制造。
近年來,Connor-Winfield晶振自豪地成為美國重要的石英晶體計(jì)時(shí)產(chǎn)品和無線通信模塊制造商。Connor-Winfield晶振的頻率控制產(chǎn)品廣泛用于各種應(yīng)用,包括電信、數(shù)據(jù)通信、無線系統(tǒng)、軍事、醫(yī)療和太空。Connor-Winfield晶振專門為其客戶設(shè)計(jì)定制和半定制的復(fù)雜產(chǎn)品,但也提供廣泛的標(biāo)準(zhǔn)產(chǎn)品線,并提供現(xiàn)貨供應(yīng)。目前,它在伊利諾伊州奧羅拉擁有兩個(gè)工廠,擁有100名裝配操作員、技術(shù)人員、工程師和支持人員。Connor-Winfield晶振特別感謝支持其在其努力領(lǐng)域繼續(xù)工作的客戶。對于我們的客戶,我們努力提供最好的產(chǎn)品、服務(wù)和價(jià)值,以培養(yǎng)長期合作機(jī)會和經(jīng)驗(yàn)的態(tài)度。
Connor-Winfield晶振開發(fā)并實(shí)施了質(zhì)量管理體系,以證明其始終如一地提供滿足客戶和適用法規(guī)要求的產(chǎn)品的能力,并通過有效應(yīng)用該系統(tǒng)(包括持續(xù)改進(jìn)和預(yù)防不合格)來滿足客戶滿意度。
實(shí)施質(zhì)量管理體系的好處的例子包括:
不斷提高我們業(yè)務(wù)和產(chǎn)品的整體績效;
通過使用Plan-DoCheck-Act來規(guī)劃流程及其交互的能力
我們?nèi)粘_\(yùn)營中基于周期和風(fēng)險(xiǎn)的思維;
促進(jìn)提高客戶滿意度的機(jī)會;
解決與其背景和目標(biāo)相關(guān)的風(fēng)險(xiǎn)和機(jī)遇。
本QMS手冊旨在定義公司對ISO9001:2015國際標(biāo)準(zhǔn)的解釋,并展示公司如何遵守該標(biāo)準(zhǔn)。
Connor-Winfield晶振包括兩個(gè)石英晶體操作;一個(gè)晶體振蕩器設(shè)計(jì)制造小組和一個(gè)計(jì)時(shí)產(chǎn)品小組,專門設(shè)計(jì)用于電信和數(shù)據(jù)通信應(yīng)用的同步時(shí)鐘、PLL模塊、特殊功能ASIC,以及用于同步以太網(wǎng)應(yīng)用的基于全球定位系統(tǒng)(GPS)的計(jì)時(shí)解決方案。
Connor-Winfield晶振通常采用ISO9000中提供的定義:質(zhì)量管理——基礎(chǔ)和詞匯。在某些情況下,特定程序或文件可能會提供不同的定義,以便在該文件的上下文中使用;在這種情況下,該定義將取代本質(zhì)量手冊或ISO9000中提供的定義。
FNETHE025 | Diodes晶振 | ASSP XO™ | 25MHz | ±25ppm |
FNETHE025 | Diodes晶振 | ASSP XO™ | 25MHz | ±25ppm |
FNETHE025 | Diodes晶振 | ASSP XO™ | 25MHz | ±25ppm |
FNSURV027 | Diodes晶振 | ASSP XO™ | 27MHz | ±30ppm |
FNSURV027 | Diodes晶振 | ASSP XO™ | 27MHz | ±30ppm |
FNSURV027 | Diodes晶振 | ASSP XO™ | 27MHz | ±30ppm |
FNGEPO002 | Diodes晶振 | ASSP XO™ | 2.048MHz | ±50ppm |
FNGEPO002 | Diodes晶振 | ASSP XO™ | 2.048MHz | ±50ppm |
FNGEPO002 | Diodes晶振 | ASSP XO™ | 2.048MHz | ±50ppm |
FKSSD1025 | Diodes晶振 | ASSP XO™ | 25MHz | ±25ppm |
FKSSD1025 | Diodes晶振 | ASSP XO™ | 25MHz | ±25ppm |
FKSSD1025 | Diodes晶振 | ASSP XO™ | 25MHz | ±25ppm |
UJWIFI026 | Diodes晶振 | ASSP XO™ | 26MHz | ±20ppm |
UJWIFI026 | Diodes晶振 | ASSP XO™ | 26MHz | ±20ppm |
UJWIFI026 | Diodes晶振 | ASSP XO™ | 26MHz | ±20ppm |
FNEPON125 | Diodes晶振 | ASSP XO™ | 125MHz | ±50ppm |
FNEPON125 | Diodes晶振 | ASSP XO™ | 125MHz | ±50ppm |
FNEPON125 | Diodes晶振 | ASSP XO™ | 125MHz | ±50ppm |
FK1330001Z | Diodes晶振 | FK | 13.3333MHz | ±25ppm |
FK1330001Z | Diodes晶振 | FK | 13.3333MHz | ±25ppm |
FK1330001Z | Diodes晶振 | FK | 13.3333MHz | ±25ppm |
FJ2400011 | Diodes晶振 | FJ | 24MHz | ±50ppm |
FJ2400011 | Diodes晶振 | FJ | 24MHz | ±50ppm |
FJ2400011 | Diodes晶振 | FJ | 24MHz | ±50ppm |
FJ2400002 | Diodes晶振 | FJ | 24MHz | ±50ppm |
了解我們的核心產(chǎn)品和管理體系的范圍
識別接收我們產(chǎn)品或可能受產(chǎn)品影響的“利益相關(guān)方”(利益相關(guān)方),或可能對我們公司有重大利益的各方。
FJ2400002 | Diodes晶振 | FJ | 24MHz | ±50ppm |
FJ2400002 | Diodes晶振 | FJ | 24MHz | ±50ppm |
FN2500149 | Diodes晶振 | FN | 25MHz | ±50ppm |
FN2500149 | Diodes晶振 | FN | 25MHz | ±50ppm |
FN2500149 | Diodes晶振 | FN | 25MHz | ±50ppm |
SXGPON155 | Diodes晶振 | ASSP XO™ | 155.52MHz | ±50ppm |
SXGPON155 | Diodes晶振 | ASSP XO™ | 155.52MHz | ±50ppm |
SXGPON155 | Diodes晶振 | ASSP XO™ | 155.52MHz | ±50ppm |
HX2513F0026.000000 | Diodes晶振 | HX | 26MHz | ±50ppm |
HX2513F0026.000000 | Diodes晶振 | HX | 26MHz | ±50ppm |
HX2513F0026.000000 | Diodes晶振 | HX | 26MHz | ±50ppm |
HX3125006Q | Diodes晶振 | HX | 25MHz | ±30ppm |
HX3125006Q | Diodes晶振 | HX | 25MHz | ±30ppm |
HX3125006Q | Diodes晶振 | HX | 25MHz | ±30ppm |
NX3211C0125.000000 | Diodes晶振 | NX | 125MHz | ±50ppm |
NX3211C0125.000000 | Diodes晶振 | NX | 125MHz | ±50ppm |
NX3211C0125.000000 | Diodes晶振 | NX | 125MHz | ±50ppm |
FJ1600002 | Diodes晶振 | FJ | 16MHz | ±50ppm |
FJ1600002 | Diodes晶振 | FJ | 16MHz | ±50ppm |
FJ1600002 | Diodes晶振 | FJ | 16MHz | ±50ppm |
JX7011D0070.656000 | Diodes晶振 | JX | 70.656MHz | ±25ppm |
JX7011D0070.656000 | Diodes晶振 | JX | 70.656MHz | ±25ppm |
JX7011D0070.656000 | Diodes晶振 | JX | 70.656MHz | ±25ppm |
UJ2600007Z | Diodes晶振 | UJ | 26MHz | ±20ppm |
UJ2600007Z | Diodes晶振 | UJ | 26MHz | ±20ppm |
UJ2600007Z | Diodes晶振 | UJ | 26MHz | ±20ppm |
FJ1120001Z | Diodes晶振 | FJ | 11.2896MHz | ±25ppm |
FJ1120001Z | Diodes晶振 | FJ | 11.2896MHz | ±25ppm |
FJ1120001Z | Diodes晶振 | FJ | 11.2896MHz | ±25ppm |
FDC500026 | Diodes晶振 | FD | 125MHz | ±50ppm |
FDC500026 | Diodes晶振 | FD | 125MHz | ±50ppm |
FDC500026 | Diodes晶振 | FD | 125MHz | ±50ppm |
HX7011C0025.000000 | Diodes晶振 | HX | 25MHz | ±25ppm |
HX7011C0025.000000 | Diodes晶振 | HX | 25MHz | ±25ppm |
HX7011C0025.000000 | Diodes晶振 | HX | 25MHz | ±25ppm |
NX5011B0125.000000 | Diodes晶振 | NX | 125MHz | ±25ppm |
NX5011B0125.000000 | Diodes晶振 | NX | 125MHz | ±25ppm |
NX5011B0125.000000 | Diodes晶振 | NX | 125MHz | ±25ppm |
FNA000088Z | Diodes晶振 | FN | 100MHz | ±50ppm |
FNA000088Z | Diodes晶振 | FN | 100MHz | ±50ppm |
FNA000088Z | Diodes晶振 | FN | 100MHz | ±50ppm |
FNA000065 | Diodes晶振 | FN | 100MHz | ±25ppm |
FNA000065 | Diodes晶振 | FN | 100MHz | ±25ppm |
FNA000065 | Diodes晶振 | FN | 100MHz | ±25ppm |
NX71C50003 | Diodes晶振 | NX | 125MHz | ±25ppm |
NX71C50003 | Diodes晶振 | NX | 125MHz | ±25ppm |
NX71C50003 | Diodes晶振 | NX | 125MHz | ±25ppm |
FNC500131 | Diodes晶振 | FN | 125MHz | ±50ppm |
FNC500131 | Diodes晶振 | FN | 125MHz | ±50ppm |
FNC500131 | Diodes晶振 | FN | 125MHz | ±50ppm |
基于對上述關(guān)注問題、利益相關(guān)者利益的分析,并考慮到其提供的產(chǎn)品和服務(wù),康納溫菲爾德確定了質(zhì)量管理體系的范圍如下:
基于晶體、厚膜和PCB的頻率控制設(shè)備的設(shè)計(jì)和制造。Toll制造的半導(dǎo)體設(shè)備的設(shè)計(jì)和測試。電子組件和相關(guān)服務(wù)的合同制造。
NX71C50001 | Diodes晶振 | NX | 125MHz | ±20ppm |
NX71C50001 | Diodes晶振 | NX | 125MHz | ±20ppm |
NX71C50001 | Diodes晶振 | NX | 125MHz | ±20ppm |
FM3900001Z | Diodes晶振 | FM | 39.0625MHz | ±50ppm |
FM3900001Z | Diodes晶振 | FM | 39.0625MHz | ±50ppm |
FM3900001Z | Diodes晶振 | FM | 39.0625MHz | ±50ppm |
FKA000018Z | Diodes晶振 | FK | 100MHz | ±50ppm |
FKA000018Z | Diodes晶振 | FK | 100MHz | ±50ppm |
FKA000018Z | Diodes晶振 | FK | 100MHz | ±50ppm |
HX3124501Q | Diodes晶振 | HX | 24.545452MHz | ±25ppm |
HX3124501Q | Diodes晶振 | HX | 24.545452MHz | ±25ppm |
HX3124501Q | Diodes晶振 | HX | 24.545452MHz | ±25ppm |
HX31330001 | Diodes晶振 | HX | 33MHz | ±50ppm |
HX31330001 | Diodes晶振 | HX | 33MHz | ±50ppm |
HX31330001 | Diodes晶振 | HX | 33MHz | ±50ppm |
HX3212F0040.000000 | Diodes晶振 | HX | 40MHz | ±50ppm |
HX3212F0040.000000 | Diodes晶振 | HX | 40MHz | ±50ppm |
HX3212F0040.000000 | Diodes晶振 | HX | 40MHz | ±50ppm |
SX10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
SX10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
SX10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
HX3127001Q | Diodes晶振 | HX | 27MHz | ±25ppm |
HX3127001Q | Diodes晶振 | HX | 27MHz | ±25ppm |
HX3127001Q | Diodes晶振 | HX | 27MHz | ±25ppm |
HX21480001 | Diodes晶振 | HX | 48MHz | ±50ppm |
HX21480001 | Diodes晶振 | HX | 48MHz | ±50ppm |
HX21480001 | Diodes晶振 | HX | 48MHz | ±50ppm |
NX7031E0125.000000 | Diodes晶振 | NX | 125MHz | ±50ppm |
NX7031E0125.000000 | Diodes晶振 | NX | 125MHz | ±50ppm |
NX7031E0125.000000 | Diodes晶振 | NX | 125MHz | ±50ppm |
HX2127001Q | Diodes晶振 | HX | 27MHz | ±25ppm |
HX2127001Q | Diodes晶振 | HX | 27MHz | ±25ppm |
HX2127001Q | Diodes晶振 | HX | 27MHz | ±25ppm |
SHPCIE100 | Diodes晶振 | ASSP XO™ | 100MHz | ±50ppm |
SHPCIE100 | Diodes晶振 | ASSP XO™ | 100MHz | ±50ppm |
SHPCIE100 | Diodes晶振 | ASSP XO™ | 100MHz | ±50ppm |
SQPCIE100 | Diodes晶振 | ASSP XO™ | 100MHz | ±50ppm |
SQPCIE100 | Diodes晶振 | ASSP XO™ | 100MHz | ±50ppm |
SQPCIE100 | Diodes晶振 | ASSP XO™ | 100MHz | ±50ppm |
SN10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
SN10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
SN10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
SQA000001 | Diodes晶振 | SQ | 100MHz | ±50ppm |
SQA000001 | Diodes晶振 | SQ | 100MHz | ±50ppm |
SQA000001 | Diodes晶振 | SQ | 100MHz | ±50ppm |
NX53D3301Z | Diodes晶振 | NX | 133.333333MHz | ±50ppm |
NX53D3301Z | Diodes晶振 | NX | 133.333333MHz | ±50ppm |
NX53D3301Z | Diodes晶振 | NX | 133.333333MHz | ±50ppm |
JT2553P0016.369000 | Diodes晶振 | JT | 16.369MHz | ±500ppb |
JT2553P0016.369000 | Diodes晶振 | JT | 16.369MHz | ±500ppb |
實(shí)施質(zhì)量管理體系的好處的例子包括:
不斷提高我們業(yè)務(wù)和產(chǎn)品的整體績效;
通過使用Plan-DoCheck-Act來規(guī)劃流程及其交互的能力
我們?nèi)粘_\(yùn)營中基于周期和風(fēng)險(xiǎn)的思維;
JT2553P0016.369000 | Diodes晶振 | JT | 16.369MHz | ±500ppb |
JT15260001 | Diodes晶振 | JT | 26MHz | ±500ppb |
JT15260001 | Diodes晶振 | JT | 26MHz | ±500ppb |
JT15260001 | Diodes晶振 | JT | 26MHz | ±500ppb |
NX72F5506Z | Diodes晶振 | NX | 155.52MHz | ±50ppm |
NX72F5506Z | Diodes晶振 | NX | 155.52MHz | ±50ppm |
NX72F5506Z | Diodes晶振 | NX | 155.52MHz | ±50ppm |
NX72F6208Z | Diodes晶振 | NX | 156.25MHz | ±50ppm |
NX72F6208Z | Diodes晶振 | NX | 156.25MHz | ±50ppm |
NX72F6208Z | Diodes晶振 | NX | 156.25MHz | ±50ppm |
HX51706001 | Diodes晶振 | HX | 70.656MHz | ±50ppm |
HX51706001 | Diodes晶振 | HX | 70.656MHz | ±50ppm |
HX51706001 | Diodes晶振 | HX | 70.656MHz | ±50ppm |
HX7011C0020.000000 | Diodes晶振 | HX | 20MHz | ±25ppm |
HX7011C0020.000000 | Diodes晶振 | HX | 20MHz | ±25ppm |
HX7011C0020.000000 | Diodes晶振 | HX | 20MHz | ±25ppm |
PBF620074Z | Diodes晶振 | PB | 156.25MHz | ±50ppm |
PBF620074Z | Diodes晶振 | PB | 156.25MHz | ±50ppm |
PBF620074Z | Diodes晶振 | PB | 156.25MHz | ±50ppm |
NX3241E0100.000000 | Diodes晶振 | NX | 100MHz | ±50ppm |
NX3241E0100.000000 | Diodes晶振 | NX | 100MHz | ±50ppm |
NX3241E0100.000000 | Diodes晶振 | NX | 100MHz | ±50ppm |
PXC500007 | Diodes晶振 | PX | 125MHz | ±50ppm |
PXC500007 | Diodes晶振 | PX | 125MHz | ±50ppm |
PXC500007 | Diodes晶振 | PX | 125MHz | ±50ppm |
NX73K0004Z | Diodes晶振 | NX | 200MHz | ±50ppm |
NX73K0004Z | Diodes晶振 | NX | 200MHz | ±50ppm |
NX73K0004Z | Diodes晶振 | NX | 200MHz | ±50ppm |
NX7021E0150.000000 | Diodes晶振 | NX | 150MHz | ±50ppm |
NX7021E0150.000000 | Diodes晶振 | NX | 150MHz | ±50ppm |
解決與其背景和目標(biāo)相關(guān)的風(fēng)險(xiǎn)和機(jī)遇。
本QMS手冊旨在定義公司對ISO9001:2015國際標(biāo)準(zhǔn)的解釋,并展示公司如何遵守該標(biāo)準(zhǔn)。
Connor-Winfield晶振包括兩個(gè)石英晶體操作;一個(gè)晶體振蕩器設(shè)計(jì)制造小組和一個(gè)計(jì)時(shí)產(chǎn)品小組,專門設(shè)計(jì)用于電信和數(shù)據(jù)通信應(yīng)用的同步時(shí)鐘、PLL模塊、特殊功能ASIC,以及用于同步以太網(wǎng)應(yīng)用的基于全球定位系統(tǒng)(GPS)的計(jì)時(shí)解決方案。
NX7021E0150.000000 | Diodes晶振 | NX | 150MHz | ±50ppm |
NX5041D0100.000000 | Diodes晶振 | NX | 100MHz | ±25ppm |
NX5041D0100.000000 | Diodes晶振 | NX | 100MHz | ±25ppm |
NX5041D0100.000000 | Diodes晶振 | NX | 100MHz | ±25ppm |
NX7021D0148.500000 | Diodes晶振 | NX | 148.5MHz | ±25ppm |
NX7021D0148.500000 | Diodes晶振 | NX | 148.5MHz | ±25ppm |
NX7021D0148.500000 | Diodes晶振 | NX | 148.5MHz | ±25ppm |
NX3221E0150.000000 | Diodes晶振 | NX | 150MHz | ±50ppm |
NX3221E0150.000000 | Diodes晶振 | NX | 150MHz | ±50ppm |
NX3221E0150.000000 | Diodes晶振 | NX | 150MHz | ±50ppm |
SNSAS2150 | Diodes晶振 | ASSP XO™ | 150MHz | ±50ppm |
SNSAS2150 | Diodes晶振 | ASSP XO™ | 150MHz | ±50ppm |
SNSAS2150 | Diodes晶振 | ASSP XO™ | 150MHz | ±50ppm |
PD10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
PD10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
PD10GE156 | Diodes晶振 | ASSP XO™ | 156.25MHz | ±50ppm |
PDF620008Z | Diodes晶振 | PD | 156.25MHz | ±50ppm |
PDF620008Z | Diodes晶振 | PD | 156.25MHz | ±50ppm |
PDF620008Z | Diodes晶振 | PD | 156.25MHz | ±50ppm |
NX72G1102Z | Diodes晶振 | NX | 161.132812MHz | ±50ppm |
NX72G1102Z | Diodes晶振 | NX | 161.132812MHz | ±50ppm |
NX72G1102Z | Diodes晶振 | NX | 161.132812MHz | ±50ppm |
NX7032C0200.000000 | Diodes晶振 | NX | 200MHz | ±50ppm |
NX7032C0200.000000 | Diodes晶振 | NX | 200MHz | ±50ppm |
NX7032C0200.000000 | Diodes晶振 | NX | 200MHz | ±50ppm |
UX52F62008 | Diodes晶振 | UX | 156.25MHz | ±50ppm |
UX52F62008 | Diodes晶振 | UX | 156.25MHz | ±50ppm |
UX52F62008 | Diodes晶振 | UX | 156.25MHz | ±50ppm |
UX54F62001 | Diodes晶振 | UX | 156.25MHz | ±50ppm |
UX54F62001 | Diodes晶振 | UX | 156.25MHz | ±50ppm |
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此文關(guān)鍵字: Connor-Winfield晶振
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