EFR32FG22系列專有無線2.4Ghz SoC Silicon晶振,您不容錯(cuò)過
Silicon晶振EFR32FG22系列2專有無線2.4Ghz SoC EFR32FG22(FG22)專有無線2.4Ghz SoC解決方案是無線Gecko系列2平臺(tái)的一部分。FG22SoC將38.4MHz Arm®Cortex®-M33內(nèi)核與TrustZone以及接收靈敏度達(dá)-102.3dBm的高性能無線電集成在一起。這款SoC將超低傳輸和接收功率(+6dBm下為8.2mATX,3.6mARX)、1.2µA深入睡眠模式功率以及諸如RFSense之類創(chuàng)新低功耗功能組合在一起,提供業(yè)界領(lǐng)先的能源效率,可延長電池有限或能量收集選項(xiàng)的產(chǎn)品(如電子貨架標(biāo)簽和工業(yè)無線傳感器節(jié)點(diǎn)使用的產(chǎn)品)的運(yùn)行壽命。
510FBA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 2.5V | ±25ppm |
511ABA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
511ABA148M500AAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
511BBA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
511BBA148M500AAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
511FBA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
511FBA148M500AAGR | Silicon晶振 | Si511 | 148.5MHz | 2.5V | ±25ppm |
511ABA25M0000BAGR | Silicon晶振 | Si511 | 25MHz | 3.3V | ±25ppm |
511ABA125M000AAG | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
510ABA200M000BAGR | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
510BBA200M000BAGR | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
510FBA200M000BAGR | Silicon晶振 | Si510 | 200MHz | 2.5V | ±25ppm |
511ABA200M000BAGR | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
511BBA200M000BAGR | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
511FBA200M000BAGR | Silicon晶振 | Si511 | 200MHz | 2.5V | ±25ppm |
510ABA212M500BAGR | Silicon晶振 | Si510 | 212.5MHz | 3.3V | ±25ppm |
510BBA212M500BAGR | Silicon晶振 | Si510 | 212.5MHz | 3.3V | ±25ppm |
510FBA212M500BAGR | Silicon晶振 | Si510 | 212.5MHz | 2.5V | ±25ppm |
511ABA212M500BAGR | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
511BBA212M500BAGR | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
本應(yīng)用說明旨在幫助用戶利用能夠?qū)崿F(xiàn)優(yōu)良RF性能的設(shè)計(jì)實(shí)踐,設(shè)計(jì)EFR32系列2無線Gecko產(chǎn)品組合的PCB。2.4GHz EFR32系列2無線MCU的匹配原則載于應(yīng)用說明AN930.2:EFR32系列22.4GHz匹配指南中,而1GHz以下EFR32系列2設(shè)備的匹配過程在AN923.2:EFR32系列21GHz以下匹配指南中予以討論。以下應(yīng)用說明詳細(xì)介紹了與MCU相關(guān)的主題:AN0918.2:系列1至無線Gecko系列2兼容性和遷移指南、AN0948.2:EFR32系列2電源配置和DC-DC,以及AN0955:CRYPTO。SiliconLabsMCU和無線入門套件以及SimplicityStudio提供強(qiáng)大的開發(fā)和調(diào)試環(huán)境。為利用自定義硬件的功能和特性,SiliconLabs推薦在自定義硬件設(shè)計(jì)中包含調(diào)試和編程接口連接器。有關(guān)包含這些連接器接口的詳細(xì)信息和優(yōu)點(diǎn)在AN958:自定義設(shè)計(jì)的調(diào)試和編程接口中有詳細(xì)闡述。EFR32系列2的電源配置載于AN0002.2:EFR32無線Gecko系列2硬件設(shè)計(jì)注意事項(xiàng)。RF性能很大程度上依賴于PCB布局以及匹配網(wǎng)絡(luò)的設(shè)計(jì)。為實(shí)現(xiàn)最佳性能,SiliconLabs建議使用下列部分所述的PCB布局設(shè)計(jì)指南。
511FBA212M500BAGR | Silicon晶振 | Si511 | 212.5MHz | 2.5V | ±25ppm |
510FBA200M000AAGR | Silicon晶振 | Si510 | 200MHz | 2.5V | ±25ppm |
510ABA200M000AAGR | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
510BBA200M000AAGR | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
511ABA200M000AAGR | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
511BBA200M000AAGR | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
511FBA200M000AAGR | Silicon晶振 | Si511 | 200MHz | 2.5V | ±25ppm |
510ABA212M500AAGR | Silicon晶振 | Si510 | 212.5MHz | 3.3V | ±25ppm |
510BBA212M500AAGR | Silicon晶振 | Si510 | 212.5MHz | 3.3V | ±25ppm |
510FBA212M500AAGR | Silicon晶振 | Si510 | 212.5MHz | 2.5V | ±25ppm |
511ABA212M500AAGR | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
511BBA212M500AAGR | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
511FBA212M500AAGR | Silicon晶振 | Si511 | 212.5MHz | 2.5V | ±25ppm |
511SAA20M0000AAG | Silicon晶振 | Si511 | 20MHz | 1.8V | ±50ppm |
510BBA150M000BAG | Silicon晶振 | Si510 | 150MHz | 3.3V | ±25ppm |
511BCB125M000AAG | Silicon晶振 | Si511 | 125MHz | 3.3V | ±20ppm |
510FBA154M875AAG | Silicon晶振 | Si510 | 154.875MHz | 2.5V | ±25ppm |
510FBA157M625AAG | Silicon晶振 | Si510 | 157.625MHz | 2.5V | ±25ppm |
511ABA25M0000AAG | Silicon晶振 | Si511 | 25MHz | 3.3V | ±25ppm |
511JBA125M000AAG | Silicon晶振 | Si511 | 125MHz | 1.8V | ±25ppm |
使用EFR32系列2無線MCU的設(shè)計(jì)建議已使用SiliconLabs提供的參考設(shè)計(jì)完成廣泛測試。建議設(shè)計(jì)者按原樣使用參考設(shè)計(jì),因?yàn)槠淠軌虮M可能減小寄生現(xiàn)象導(dǎo)致或不良元件布置和PCB排線產(chǎn)生的失諧作用。EFR32參考設(shè)計(jì)文件位于SimplicityStudio的“套件文檔”選項(xiàng)卡下。設(shè)計(jì)的緊湊型RF部分(不包括50Ω單端天線)以藍(lán)框圈出,強(qiáng)烈建議使用圈出的RF布局,以避免出現(xiàn)任何可能的失諧作用。下圖顯示了設(shè)計(jì)中圈出的緊湊型RF部分。
EFR32xG21無線MCU的匹配網(wǎng)絡(luò)類型本節(jié)將提供建議與EFR32xG21搭配使用的匹配網(wǎng)絡(luò)。務(wù)必強(qiáng)調(diào)的一點(diǎn)是,調(diào)節(jié)后的匹配組件值很大程度上依賴于布局圖,因此建議遵循3.2.2EFR32xG21匹配網(wǎng)絡(luò)的其他布局設(shè)計(jì)指南中記錄的布局指導(dǎo)原則。EFR32xG21無線MCU可提供最大+20dBm的功率。所有EFR32xG21參考設(shè)計(jì)均使用L系列并聯(lián)C梯級匹配網(wǎng)絡(luò)。對于低功耗應(yīng)用(≤10dBm),3元素C-L-C網(wǎng)絡(luò)已足夠,而高功耗解決方案(>10dBm)則需要5元素匹配。對于0dBm輸出功率,建議的匹配網(wǎng)絡(luò)顯示在Figure2.4適用于0dBm輸出功率的EFR32xG21的建議匹配網(wǎng)絡(luò)onpage5。
510KCA100M000BAG | Silicon晶振 | Si510 | 100MHz | 1.8V | ±20ppm |
590AB70M6560DG | Silicon晶振 | Si590 | 70.656MHz | 3.3V | ±25ppm |
590FA200M000DG | Silicon晶振 | Si590 | 200MHz | 2.5V | ±50ppm |
590DA156M250DG | Silicon晶振 | Si590 | 156.25MHz | 3.3V | ±50ppm |
591BB300M000DG | Silicon晶振 | Si591 | 300MHz | 3.3V | ±25ppm |
550CD74M2500DGR | Silicon晶振 | Si550 | 74.25MHz | 3.3V | ±50ppm |
530CA28M6000DG | Silicon晶振 | Si530 | 28.6MHz | 3.3V | ±50ppm |
530AC125M000DGR | Silicon晶振 | Si530 | 125MHz | 3.3V | ±7ppm |
530BC125M000DGR | Silicon晶振 | Si530 | 125MHz | 3.3V | ±7ppm |
530EC125M000DGR | Silicon晶振 | Si530 | 125MHz | 2.5V | ±7ppm |
531AC125M000DGR | Silicon晶振 | Si531 | 125MHz | 3.3V | ±7ppm |
531BC125M000DGR | Silicon晶振 | Si531 | 125MHz | 3.3V | ±7ppm |
531EC125M000DGR | Silicon晶振 | Si531 | 125MHz | 2.5V | ±7ppm |
531FC125M000DGR | Silicon晶振 | Si531 | 125MHz | 2.5V | ±7ppm |
530AC106M250DGR | Silicon晶振 | Si530 | 106.25MHz | 3.3V | ±7ppm |
530BC106M250DGR | Silicon晶振 | Si530 | 106.25MHz | 3.3V | ±7ppm |
530EC106M250DGR | Silicon晶振 | Si530 | 106.25MHz | 2.5V | ±7ppm |
530FC106M250DGR | Silicon晶振 | Si530 | 106.25MHz | 2.5V | ±7ppm |
531AC106M250DGR | Silicon晶振 | Si531 | 106.25MHz | 3.3V | ±7ppm |
531BC106M250DGR | Silicon晶振 | Si531 | 106.25MHz | 3.3V | ±7ppm |
531EC106M250DGR | Silicon晶振 | Si531 | 106.25MHz | 2.5V | ±7ppm |
531FC106M250DGR | Silicon晶振 | Si531 | 106.25MHz | 2.5V | ±7ppm |
531FC25M0000DGR | Silicon晶振 | Si531 | 25MHz | 2.5V | ±7ppm |
530BC25M0000DGR | Silicon晶振 | Si530 | 25MHz | 3.3V | ±7ppm |
514GBB000118AAG | Silicon晶振 | Si514 | 156.25MHz | 2.5V | ±25ppm |
當(dāng)然,EFR32設(shè)備的TX輸出功率增加的同時(shí),諧波信號絕對大小也會(huì)相應(yīng)地提高。由于大部分監(jiān)管標(biāo)準(zhǔn)(例如FCC、ETSI、ARIB等)要求諧波信號衰減至一定絕對功率級別以下(以瓦特或dBm為單位),所需的低通濾波量通常大于使用較高輸出功率的EFR32的RF無線電板。EFR32xG21的所有無線電板均包含一個(gè)50ΩIFA(反向F天線),其連接至匹配網(wǎng)絡(luò)的50Ω輸出,能夠測量輻射性能??稍谶@些無線電板上通過U.FL連接器進(jìn)行可選傳導(dǎo)測量。天線旁有一個(gè)額外的元件(L3),其基本上不屬于匹配網(wǎng)絡(luò)。對于自定義設(shè)計(jì),建議保留該系列元素的選項(xiàng)以進(jìn)行額外的諧波抑制,其默認(rèn)值應(yīng)為0?。這些無線電板上的IFAPCB天線優(yōu)化為50?阻抗,無任何外部離散天線匹配網(wǎng)絡(luò)。為了實(shí)現(xiàn)最大靈活性,建議在自定義設(shè)計(jì)時(shí)保留L3與天線之間的3元素PI結(jié)構(gòu)天線匹配網(wǎng)絡(luò)選項(xiàng)。Note:若使用兩個(gè)RF引腳(RF2G4_IO1和RF2G4_IO2),匹配可能會(huì)相互耦合和失諧,因此理想匹配是僅填充一個(gè)引腳。
530RB150M000DG | Silicon晶振 | Si530 | 150MHz | 2.5V | ±20ppm |
530RB200M000DG | Silicon晶振 | Si530 | 200MHz | 2.5V | ±20ppm |
530BC100M000DG | Silicon晶振 | Si530 | 100MHz | 3.3V | ±20ppm |
530AC155M520DGR | Silicon晶振 | Si530 | 155.52MHz | 3.3V | ±7ppm |
530AC156M250DGR | Silicon晶振 | Si530 | 156.25MHz | 3.3V | ±7ppm |
530BC155M520DGR | Silicon晶振 | Si530 | 155.52MHz | 3.3V | ±7ppm |
530BC156M250DGR | Silicon晶振 | Si530 | 156.25MHz | 3.3V | ±7ppm |
530EC155M520DGR | Silicon晶振 | Si530 | 155.52MHz | 2.5V | ±7ppm |
530EC156M250DGR | Silicon晶振 | Si530 | 156.25MHz | 2.5V | ±7ppm |
530FC155M520DGR | Silicon晶振 | Si530 | 155.52MHz | 2.5V | ±7ppm |
530FC156M250DGR | Silicon晶振 | Si530 | 156.25MHz | 2.5V | ±7ppm |
531AC155M520DGR | Silicon晶振 | Si531 | 155.52MHz | 3.3V | ±7ppm |
531AC156M250DGR | Silicon晶振 | Si531 | 156.25MHz | 3.3V | ±7ppm |
531BC155M520DGR | Silicon晶振 | Si531 | 155.52MHz | 3.3V | ±7ppm |
531BC156M250DGR | Silicon晶振 | Si531 | 156.25MHz | 3.3V | ±7ppm |
531EC155M520DGR | Silicon晶振 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531EC156M250DGR | Silicon晶振 | Si531 | 156.25MHz | 2.5V | ±7ppm |
531FC155M520DGR | Silicon晶振 | Si531 | 155.52MHz | 2.5V | ±7ppm |
531FC156M250DGR | Silicon晶振 | Si531 | 156.25MHz | 2.5V | ±7ppm |
530AC187M500DGR | Silicon晶振 | Si530 | 187.5MHz | 3.3V | ±7ppm |
530BC187M500DGR | Silicon晶振 | Si530 | 187.5MHz | 3.3V | ±7ppm |
530EC187M500DGR | Silicon晶振 | Si530 | 187.5MHz | 2.5V | ±7ppm |
530FC187M500DGR | Silicon晶振 | Si530 | 187.5MHz | 2.5V | ±7ppm |
531AC187M500DGR | Silicon晶振 | Si531 | 187.5MHz | 3.3V | ±7ppm |
531BC187M500DGR | Silicon晶振 | Si531 | 187.5MHz | 3.3V | ±7ppm |
EFR32系列2無線MCU的總體布局設(shè)計(jì)指南設(shè)計(jì)RF相關(guān)布局以實(shí)現(xiàn)優(yōu)良RF性能的一般指南如下:
•對于自定義設(shè)計(jì),請盡可能使用與參考設(shè)計(jì)相同數(shù)量的PCB層。與參考PCB層數(shù)出現(xiàn)偏差會(huì)導(dǎo)致不同的PCB寄生電容,無法實(shí)現(xiàn)匹配網(wǎng)絡(luò)的最佳形態(tài)。如果需要層數(shù)與參考設(shè)計(jì)不同的設(shè)計(jì),請確保頂層和內(nèi)部第一層之間的距離與參考設(shè)計(jì)相似,因?yàn)檫@個(gè)距離決定了接地的寄生電容值。否則可能會(huì)出現(xiàn)匹配網(wǎng)絡(luò)失調(diào),可能需要微調(diào)元件值。
531EC187M500DGR | Silicon晶振 | Si531 | 187.5MHz | 2.5V | ±7ppm |
531FC187M500DGR | Silicon晶振 | Si531 | 187.5MHz | 2.5V | ±7ppm |
530AC000110DGR | Silicon晶振 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
530AC148M500DGR | Silicon晶振 | Si530 | 148.5MHz | 3.3V | ±7ppm |
530AC200M000DGR | Silicon晶振 | Si530 | 200MHz | 3.3V | ±7ppm |
530BC000110DGR | Silicon晶振 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
530BC148M500DGR | Silicon晶振 | Si530 | 148.5MHz | 3.3V | ±7ppm |
530BC200M000DGR | Silicon晶振 | Si530 | 200MHz | 3.3V | ±7ppm |
530EC000110DGR | Silicon晶振 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
530EC148M500DGR | Silicon晶振 | Si530 | 148.5MHz | 2.5V | ±7ppm |
530EC200M000DGR | Silicon晶振 | Si530 | 200MHz | 2.5V | ±7ppm |
530FC000110DGR | Silicon晶振 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
530FC148M500DGR | Silicon晶振 | Si530 | 148.5MHz | 2.5V | ±7ppm |
531AC000110DGR | Silicon晶振 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
531AC148M500DGR | Silicon晶振 | Si531 | 148.5MHz | 3.3V | ±7ppm |
531AC200M000DGR | Silicon晶振 | Si531 | 200MHz | 3.3V | ±7ppm |
531BC000110DGR | Silicon晶振 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
531BC148M500DGR | Silicon晶振 | Si531 | 148.5MHz | 3.3V | ±7ppm |
531BC200M000DGR | Silicon晶振 | Si531 | 200MHz | 3.3V | ±7ppm |
531EC000110DGR | Silicon晶振 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
531EC148M500DGR | Silicon晶振 | Si531 | 148.5MHz | 2.5V | ±7ppm |
531EC200M000DGR | Silicon晶振 | Si531 | 200MHz | 2.5V | ±7ppm |
531FC000110DGR | Silicon晶振 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
531FC148M500DGR | Silicon晶振 | Si531 | 148.5MHz | 2.5V | ±7ppm |
531FC200M000DGR | Silicon晶振 | Si531 | 200MHz | 2.5V | ±7ppm |
•避免接地平面敷金屬分離。建議盡可能多地在PCB上創(chuàng)建均一的接地平面,并使其不被布線分離。而且,匹配網(wǎng)絡(luò)與EFR32IC裸焊盤接地之間的接地路徑應(yīng)清晰,并在至少一個(gè)PCB層上暢通無阻。接地平面分離的唯一例外是EFR32匹配網(wǎng)絡(luò)和HFXO區(qū)域,在這些位置,接地引腳不應(yīng)連接至頂層接地。有關(guān)這些例外情況的更多信息,請參閱3.2EFR32系列2無線MCU的布局。
550AE100M000DGR | Silicon晶振 | Si550 | 100MHz | 3.3V | ±20ppm |
530BC130M250DG | Silicon晶振 | Si530 | 130.25MHz | 3.3V | ±7ppm |
550AE100M000DG | Silicon晶振 | Si550 | 100MHz | 3.3V | ±20ppm |
530BC154M000DG | Silicon晶振 | Si530 | 154MHz | 3.3V | ±7ppm |
530AC312M500DGR | Silicon晶振 | Si530 | 312.5MHz | 3.3V | ±7ppm |
530BC312M500DGR | Silicon晶振 | Si530 | 312.5MHz | 3.3V | ±7ppm |
530EC312M500DGR | Silicon晶振 | Si530 | 312.5MHz | 2.5V | ±7ppm |
530FC312M500DGR | Silicon晶振 | Si530 | 312.5MHz | 2.5V | ±7ppm |
531AC312M500DGR | Silicon晶振 | Si531 | 312.5MHz | 3.3V | ±7ppm |
531BC312M500DGR | Silicon晶振 | Si531 | 312.5MHz | 3.3V | ±7ppm |
531EC312M500DGR | Silicon晶振 | Si531 | 312.5MHz | 2.5V | ±7ppm |
531FC312M500DGR | Silicon晶振 | Si531 | 312.5MHz | 2.5V | ±7ppm |
530AC250M000DGR | Silicon晶振 | Si530 | 250MHz | 3.3V | ±7ppm |
530AC311M040DGR | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
530AC622M080DGR | Silicon晶振 | Si530 | 622.08MHz | 3.3V | ±7ppm |
530BC250M000DGR | Silicon晶振 | Si530 | 250MHz | 3.3V | ±7ppm |
530BC311M040DGR | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
530BC622M080DGR | Silicon晶振 | Si530 | 622.08MHz | 3.3V | ±7ppm |
530EC250M000DGR | Silicon晶振 | Si530 | 250MHz | 2.5V | ±7ppm |
530EC311M040DGR | Silicon晶振 | Si530 | 311.04MHz | 2.5V | ±7ppm |
530EC622M080DGR | Silicon晶振 | Si530 | 622.08MHz | 2.5V | ±7ppm |
530FC250M000DGR | Silicon晶振 | Si530 | 250MHz | 2.5V | ±7ppm |
530FC311M040DGR | Silicon晶振 | Si530 | 311.04MHz | 2.5V | ±7ppm |
530FC622M080DGR | Silicon晶振 | Si530 | 622.08MHz | 2.5V | ±7ppm |
531AC250M000DGR | Silicon晶振 | Si531 | 250MHz | 3.3V | ±7ppm |
•請使用盡可能多的接地孔(尤其是在GND引腳附近),以盡可能降低不同層的接地灌流和GND引腳之間的串聯(lián)寄生電感。
•請沿PCB邊緣和內(nèi)部GND金屬灌流邊緣使用一系列GND針腳孔。孔之間的最大距離應(yīng)小于第10次諧波的Lambda/10(參考無線電板上孔之間的距離一般為40–50mil)。該距離能夠在這些邊緣的彌散場造成的高諧波下降低PCB輻射。
•對于兩層以上的設(shè)計(jì),建議在內(nèi)層放置盡可能多的走線(甚至是數(shù)字走線),確保頂層和底層有大規(guī)模的連續(xù)GND灌流。
531AC311M040DGR | Silicon晶振 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531AC622M080DGR | Silicon晶振 | Si531 | 622.08MHz | 3.3V | ±7ppm |
531BC250M000DGR | Silicon晶振 | Si531 | 250MHz | 3.3V | ±7ppm |
531BC311M040DGR | Silicon晶振 | Si531 | 311.04MHz | 3.3V | ±7ppm |
531BC622M080DGR | Silicon晶振 | Si531 | 622.08MHz | 3.3V | ±7ppm |
531EC250M000DGR | Silicon晶振 | Si531 | 250MHz | 2.5V | ±7ppm |
531EC311M040DGR | Silicon晶振 | Si531 | 311.04MHz | 2.5V | ±7ppm |
531EC622M080DGR | Silicon晶振 | Si531 | 622.08MHz | 2.5V | ±7ppm |
531FC250M000DGR | Silicon晶振 | Si531 | 250MHz | 2.5V | ±7ppm |
531FC311M040DGR | Silicon晶振 | Si531 | 311.04MHz | 2.5V | ±7ppm |
531FC622M080DGR | Silicon晶振 | Si531 | 622.08MHz | 2.5V | ±7ppm |
530CA40M0000BG | Silicon晶振 | Si530 | 40MHz | 3.3V | ±50ppm |
531AA640M000BG | Silicon晶振 | Si531 | 640MHz | 3.3V | ±50ppm |
501BCAM032768BAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501BCAM032768DAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768BAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768BAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768CAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501HCAM032768BAG | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768CAF | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768CAG | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501ABA8M00000CAF | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ABA8M00000DAF | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ABA8M00000DAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
•避免使用長和/或薄的傳輸線連接與RF相關(guān)的元件。否則由于分布式寄生電感,可能發(fā)生某些失諧作用。此外,請盡可能縮短互連線,降低接地的并聯(lián)寄生電容。但是,相鄰分立元件的偶聯(lián)可能會(huì)增加。
•在不同寬度(即不同阻抗)的傳輸線之間使用遞變線路,以減少內(nèi)部反射。
•避免使用回路和長線,以消除共振。它們還可用作不良輻射體,尤其是在諧波上。
•請使用一些旁路電容確保優(yōu)良的VDD濾波(尤其是工作頻率范圍)。電容的串聯(lián)自諧應(yīng)靠近濾波頻率。過濾最高頻率的旁路電容應(yīng)最接近EFR32的VDD引腳。除基礎(chǔ)頻率外,應(yīng)過濾晶體/時(shí)鐘頻率及其諧波(最高3次),以避免向上變頻激勵(lì)。
501ACA10M0000CAG | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000DAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000DAG | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501JCA10M0000CAF | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000CAG | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000DAF | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000DAG | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501HCA12M0000BAG | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000CAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000CAG | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000DAG | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501BCA16M0000DAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BCA16M0000DAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BAA16M0000BAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501BAA16M0000CAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501BAA16M0000DAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501JCA20M0000BAF | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000BAG | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000CAF | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000DAF | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000DAG | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501AAA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000CAG | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000DAG | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
•使用多個(gè)孔將晶體殼接地,避免未接地部件的輻射。請勿斷開和懸空任何可能是不良輻射體的金屬。請避免引導(dǎo)電源走線靠近晶體或在晶體下方,或者與晶體信號或時(shí)鐘走線并聯(lián)。
•確保RF相關(guān)部件(尤其是天線)遠(yuǎn)離直流轉(zhuǎn)換器輸出和相關(guān)的直流元件。
•請避免GPIO線路靠近RF線、天線或晶體或在其下方,或者與晶體信號并聯(lián)。請使用GPIO線上盡可能最低的偏差率,降低對RF或晶體信號的串?dāng)_。
501JAA24M0000BAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000CAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000DAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JCA24M0000BAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000BAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000CAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000DAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501AAA25M0000BAG | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000CAF | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000CAG | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000DAF | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501JAA25M0000CAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000CAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000DAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000DAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JCA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000BAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000CAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000DAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000DAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501HCA26M0000BAG | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000CAF | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
•請使用盡可能短的VDD走線。VDD走線可以是隱藏的不良輻射體,以便盡可能簡化VDD布線,并使用帶有很多針腳孔的大規(guī)模連續(xù)GND灌流。要簡化VDD布線,請盡量避免VDD走線的星形拓?fù)洌幢苊膺B接一個(gè)通用點(diǎn)中的所有VDD走線)。
•在天線附近使用絲網(wǎng)會(huì)對天線的絕緣環(huán)境造成輕微的影響。盡管這一影響通常可以忽略,但是請盡量避免在天線或天線灌流遮擋區(qū)使用絲網(wǎng)。
501HCA26M0000CAG | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000DAF | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000DAG | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501AAA27M0000CAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
501HCA27M0000BAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA27M0000CAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA27M0000CAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
501JAA40M0000BAF | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
501JAA40M0000CAG | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
501JAA40M0000DAF | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
501JAA40M0000DAG | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
501EAA48M0000BAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
501EAA48M0000DAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA50M0000BAF | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA50M0000CAG | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA50M0000DAF | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA50M0000DAG | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
501BAA50M0000BAG | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
501BAA50M0000CAF | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
501BAA50M0000CAG | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
501BAA50M0000DAF | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
501BAA50M0000DAG | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
501ACA100M000BAF | Silicon晶振 | Si501 | 100MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA100M000BAG | Silicon晶振 | Si501 | 100MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA100M000CAF | Silicon晶振 | Si501 | 100MHz | 1.7 V ~ 3.6 V | ±20ppm |
EFR32xG21匹配網(wǎng)絡(luò)的其他布局設(shè)計(jì)指南
•強(qiáng)烈建議在C1電容與EFR32xG21IC的對應(yīng)TX/RX引腳(RF2G4_IO1或RF2G4_IO2)之間保持大約1mm的距離(在BRD4180A無線電板上,C1電容與TX/RX引腳之間的實(shí)際距離為0.95mm)。此短線的額外寄生電感是匹配網(wǎng)絡(luò)的一部分,如果未保持精確,可能會(huì)提高諧波水平。
501ACA100M000CAG | Silicon晶振 | Si501 | 100MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA100M000DAF | Silicon晶振 | Si501 | 100MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA100M000DAG | Silicon晶振 | Si501 | 100MHz | 1.7 V ~ 3.6 V | ±20ppm |
501JCA100M000DAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
501BCAM032768BAFR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501BCAM032768BAGR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501BCAM032768CAFR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501BCAM032768CAGR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501BCAM032768DAFR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501BCAM032768DAGR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768BAFR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768BAGR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768CAFR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768CAGR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768DAFR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501JCAM032768DAGR | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
501HCAM032768BAFR | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768BAGR | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768CAFR | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768CAGR | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768DAFR | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCAM032768DAGR | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
501ABA8M00000BAFR | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ABA8M00000BAGR | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ABA8M00000CAFR | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
•相鄰匹配網(wǎng)絡(luò)元件應(yīng)盡可能彼此靠近,以盡可能降低任何接地的PCB寄生電容以及元件之間的串聯(lián)寄生電感。
•在大多數(shù)情況下,將匹配網(wǎng)絡(luò)中的連續(xù)諧波濾波電容旋轉(zhuǎn)到傳輸線的相對側(cè),可以取得較好的諧波性能。然而,EFR32xG21芯片的驗(yàn)證結(jié)果表明,對匹配網(wǎng)絡(luò)元件應(yīng)用這種定位會(huì)提高諧波水平。因此,對于EFR32xG21設(shè)備,建議將匹配網(wǎng)絡(luò)中鄰近的并聯(lián)電容連接至傳輸線的相同側(cè)。
501ABA8M00000CAGR | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ABA8M00000DAFR | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ABA8M00000DAGR | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
501ACA10M0000BAFR | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000BAGR | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000CAFR | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000CAGR | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000DAFR | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501ACA10M0000DAGR | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
501JCA10M0000BAFR | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000BAGR | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000CAFR | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000CAGR | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000DAFR | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501JCA10M0000DAGR | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
501HCA12M0000BAFR | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000BAGR | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000CAFR | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000CAGR | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000DAFR | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA12M0000DAGR | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
501BCA16M0000BAFR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BCA16M0000BAGR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BCA16M0000CAFR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BCA16M0000CAGR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BCA16M0000DAFR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BCA16M0000DAGR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
501BAA16M0000BAFR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501BAA16M0000BAGR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501BAA16M0000CAFR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
•應(yīng)使用接地導(dǎo)通孔將匹配網(wǎng)絡(luò)中的并聯(lián)電容直接連接至PCB第2層接地平面。為獲得最佳諧波性能,應(yīng)避免將接地引腳連接至頂層的公共接地金屬上。
•應(yīng)加厚電容GND引腳附近的走線,以改善散熱帶的接地效應(yīng)。這能夠盡可能降低接地灌流和GND引腳之間的串聯(lián)寄生電感。
501BAA16M0000CAGR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501BAA16M0000DAFR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501BAA16M0000DAGR | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
501JCA20M0000BAFR | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000BAGR | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000CAFR | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000CAGR | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000DAFR | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501JCA20M0000DAGR | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
501AAA24M0000BAFR | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000BAGR | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000CAFR | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000CAGR | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000DAFR | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA24M0000DAGR | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
501JAA24M0000BAFR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000BAGR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000CAFR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000CAGR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000DAFR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JAA24M0000DAGR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
501JCA24M0000BAFR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000BAGR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000CAFR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000CAGR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000DAFR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501JCA24M0000DAGR | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
501AAA25M0000BAFR | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000BAGR | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000CAFR | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
•EFR32xG21芯片有2個(gè)等效的單端TX輸出/RX輸入。若只將其中一個(gè)輸出/輸入與10dBm或20dBmPA匹配網(wǎng)絡(luò)搭配使用,應(yīng)將另一個(gè)直接連接至裸焊盤接地。請勿將未使用的TX/RX引腳連接至PCB的公共頂層接地,因?yàn)檫@可能會(huì)提高諧波水平。
•若要獲得更好的諧波性能,另建議將引腳11(RFVSS)直接連接至裸焊盤接地,而不是連接至公共頂層接地。
•在匹配網(wǎng)絡(luò)區(qū)域,請至少在布線/盤與相鄰GND灌流之間相隔0.3mm。該方法能夠盡可能降低寄生電容并減輕失諧作用。
501AAA25M0000CAGR | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000DAFR | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA25M0000DAGR | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
501JAA25M0000BAFR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000BAGR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000CAFR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000CAGR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000DAFR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JAA25M0000DAGR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
501JCA25M0000BAFR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000BAGR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000CAFR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000CAGR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000DAFR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501JCA25M0000DAGR | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
501HCA26M0000BAFR | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000BAGR | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000CAFR | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000CAGR | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000DAFR | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501HCA26M0000DAGR | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
501AAA27M0000BAFR | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA27M0000BAGR | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA27M0000CAFR | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
501AAA27M0000CAGR | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
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