首頁晶振行業(yè)動態(tài) TRANSKO水晶應(yīng)用筆記
TRANSKO水晶應(yīng)用筆記
來源：http://m.eitherspanlaw.com 作者：億金電子 2022年05月27
訂購水晶時需要提供哪些基本信息？
一般我們要求客戶提供標(biāo)稱頻率、切割角度類型（AT/BT）、支架或封裝類型、電阻（ESR）、頻率公差、
頻率穩(wěn)定性，負載電容，工作溫度范圍，驅(qū)動功率，老化等?？蛻粢部梢栽谙掠唵螘r指定其他特定規(guī)格或要求（如果有）。
什么是AT或BT削減？| 531EC622M080DG | Silicon晶振 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC622M080DG | Silicon晶振 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC311M040DG | Silicon晶振 | Si531 | 311.04MHz | 2.5V | ±7ppm |
| 530BC311M040DG | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 531BC622M080DG | Silicon晶振 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531FC312M500DG | Silicon晶振 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530EC622M080DG | Silicon晶振 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 531EC312M500DG | Silicon晶振 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530BC622M080DG | Silicon晶振 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 531AC250M000DG | Silicon晶振 | Si531 | 250MHz | 3.3V | ±7ppm |
| 530AC311M040DG | Silicon晶振 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530FC312M500DG | Silicon晶振 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 531EC250M000DG | Silicon晶振 | Si531 | 250MHz | 2.5V | ±7ppm |
| 530AC312M500DG | Silicon晶振 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC250M000DG | Silicon晶振 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530AC250M000DG | Silicon晶振 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530FC250M000DG | Silicon晶振 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530BC312M500DG | Silicon晶振 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 531BC312M500DG | Silicon晶振 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 530FC50M0000DG | Silicon晶振 | Si530 | 50MHz | 2.5V | ±7ppm |
| 535AB125M000DG | Silicon晶振 | Si535 | 125MHz | 3.3V | ±20ppm |
| 501AAA27M0000DAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA27M0000DAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JCA100M000CAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCA100M000BAG | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501HCAM032768BAF | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501BCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501JCAM032768DAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| SI50122-A1-GM | Silicon晶振 | SI50122-A1 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
| SI50122-A2-GM | Silicon晶振 | SI50122-A2 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
頻率容差和頻率穩(wěn)定性之間的主要區(qū)別是什么？
有時，如果客戶指定，“參考”頻率可能指的是標(biāo)稱（規(guī)格）頻率。
頻率穩(wěn)定性通常以百萬分之幾(ppm)表示。
晶振的頻率容差定義為在指定溫度（通常為+25°C（-2°C
當(dāng)晶體不在規(guī)范規(guī)定的溫度范圍內(nèi)工作時，其性能會發(fā)生什么變化？
晶振性能會受到影響。我們強烈不建議這樣做。它會導(dǎo)致晶體的頻率漂移。更糟糕的情況是它可能導(dǎo)致客戶電路發(fā)生故障。
| 511SAA100M000AAG | Silicon晶振 | Si511 | 100MHz | 1.8V | ±50ppm |
| 510BCA148M500BAG | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±20ppm |
| 530AA156M250DG | Silicon晶振 | Si530 | 156.25MHz | 3.3V | ±50ppm |
| 531AA156M250DG | Silicon晶振 | Si531 | 156.25MHz | 3.3V | ±50ppm |
| 530FB100M000DG | Silicon晶振 | Si530 | 100MHz | 2.5V | ±20ppm |
| 511FBA125M000AAG | Silicon晶振 | Si511 | 125MHz | 2.5V | ±25ppm |
| 530BC125M000DG | Silicon晶振 | Si530 | 125MHz | 3.3V | ±7ppm |
| 535AB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 3.3V | ±20ppm |
| 536FB125M000DG | Silicon晶振 | Si536 | 125MHz | 2.5V | ±20ppm |
| 510BBA74M2500BAG | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 511ABA125M000BAG | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000BAG | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 511ABA100M000BAG | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 510FBA125M000AAG | Silicon晶振 | Si510 | 125MHz | 2.5V | ±25ppm |
| 510ABA100M000AAG | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 511BBA200M000AAG | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
| 531BC106M250DG | Silicon晶振 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC125M000DG | Silicon晶振 | Si531 | 125MHz | 2.5V | ±7ppm |
| 511ABA74M2500BAG | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 510FBA74M2500BAG | Silicon晶振 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 510ABA100M000BAG | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510FBA100M000AAG | Silicon晶振 | Si510 | 100MHz | 2.5V | ±25ppm |
| 511BBA74M2500AAG | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511ABA106M250AAG | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 510ABA148M500BAG | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA155M520BAG | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510ABA156M250BAG | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250BAG | Silicon晶振 | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511FBA000110BAG | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
| 510BBA155M520AAG | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA000110AAG | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 511ABA000110AAG | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511BBA000110AAG | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511FBA000110AAG | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
| 510BBA212M500BAG | Silicon晶振 | Si510 | 212.5MHz | 3.3V | ±25ppm |
晶振性能會受到影響。我們強烈不建議這樣做。它會導(dǎo)致晶體的頻率漂移。更糟糕的情況是它可能導(dǎo)致客戶電路發(fā)生故障。
| 511ABA212M500BAG | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 511BBA212M500BAG | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 511FBA212M500AAG | Silicon晶振 | Si511 | 212.5MHz | 2.5V | ±25ppm |
| 510BBA200M000AAG | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
| 511BBA212M500AAG | Silicon晶振 | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 510ABA200M000AAG | Silicon晶振 | Si510 | 200MHz | 3.3V | ±25ppm |
| 511ABA200M000AAG | Silicon晶振 | Si511 | 200MHz | 3.3V | ±25ppm |
| 530EC125M000DG | Silicon晶振 | Si530 | 125MHz | 2.5V | ±7ppm |
| 531FC106M250DG | Silicon晶振 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC187M500DG | Silicon晶振 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531FC000110DG | Silicon晶振 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC200M000DG | Silicon晶振 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531AC000110DG | Silicon晶振 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531AC148M500DG | Silicon晶振 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 535EB156M250DG | Silicon晶振 | Si535 | 156.25MHz | 2.5V | ±20ppm |
| 510CBA25M0000BAG | Silicon晶振 | Si510 | 25MHz | 3.3V | ±25ppm |
| 511SBA156M250BAG | Silicon晶振 | Si511 | 156.25MHz | 1.8V | ±50ppm |
| 501JAA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501BAA16M0000DAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501JAA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501AAA27M0000CAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JAA40M0000CAF | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
| 501AAA24M0000BAF | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000CAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA27M0000BAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501EAA48M0000BAF | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JAA25M0000BAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
| 501BAA50M0000BAF | Silicon晶振 | Si501 | 50MHz | 3.3V | ±50ppm |
| 501AAA50M0000CAF | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
-Crystal主要具有其“頻率穩(wěn)定性”特性，這是由于如何將石英棒以某個預(yù)先定向的角度切割成晶體晶片的結(jié)果。今天最流行和廣泛使用的一種是AT-Cut。
AT-cut在Y軸負方向上與Z軸的切削角約為35X15'，而BT切削在Y軸正方向上與Z軸的切削角為-45X。為了便于理解，下面顯示了兩個切割的圖表。
雜散頻率會產(chǎn)生什么影響？| 501EAA48M0000DAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA25M0000DAG | Silicon晶振 | Si501 | 25MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501HCA27M0000DAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501ABA8M00000BAF | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
| 501HCA12M0000DAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA24M0000DAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
| 501AAA24M0000BAG | Silicon晶振 | Si501 | 24MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501BCA16M0000BAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501JCA24M0000CAF | Silicon晶振 | Si501 | 24MHz | 3.3V | ±20ppm |
| 501HCA26M0000BAF | Silicon晶振 | Si501 | 26MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JAA25M0000BAG | Silicon晶振 | Si501 | 25MHz | 3.3V | ±50ppm |
| 501BCA16M0000CAF | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501EAA48M0000CAG | Silicon晶振 | Si501 | 48MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501BAA16M0000BAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501BAA16M0000CAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±50ppm |
| 501JAA24M0000BAG | Silicon晶振 | Si501 | 24MHz | 3.3V | ±50ppm |
| 501AAA27M0000BAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501ACA10M0000CAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JAA40M0000BAG | Silicon晶振 | Si501 | 40MHz | 3.3V | ±50ppm |
| 501ACA10M0000BAF | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA10M0000BAF | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
| 501HCA12M0000BAF | Silicon晶振 | Si501 | 12MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA25M0000CAF | Silicon晶振 | Si501 | 25MHz | 3.3V | ±20ppm |
| 501HCA27M0000BAF | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501AAA50M0000BAG | Silicon晶振 | Si501 | 50MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501ABA8M00000BAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
| 501HCA27M0000DAG | Silicon晶振 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501ABA8M00000CAG | Silicon晶振 | Si501 | 8MHz | 1.7 V ~ 3.6 V | ±30ppm |
| 501JCA10M0000BAG | Silicon晶振 | Si501 | 10MHz | 3.3V | ±20ppm |
| 501ACA10M0000BAG | Silicon晶振 | Si501 | 10MHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCA20M0000CAG | Silicon晶振 | Si501 | 20MHz | 3.3V | ±20ppm |
| 501BCA16M0000BAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501BCA16M0000CAG | Silicon晶振 | Si501 | 16MHz | 3.3V | ±20ppm |
| 501JCA100M000DAF | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCA100M000CAF | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
什么是拉力？
晶體的牽引能力是作為負載電容函數(shù)的頻率變化的量度。
電路設(shè)計人員可以通過改變或改變晶體的負載電容來實現(xiàn)工作頻率范圍。工作頻率范圍由晶體在給定（變化）負載電容范圍內(nèi)的牽引能力決定。
什么是雜散頻率？
| 501JCA100M000BAF | Silicon晶振 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCAM032768DAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501HCAM032768DAF | Silicon晶振 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501JCAM032768CAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501BCAM032768BAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501BCAM032768CAF | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501BCAM032768CAG | Silicon晶振 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 500DLAA125M000ACF | Silicon晶振 | Si500D | 125MHz | 2.5V | ±150ppm |
| 500DLAA200M000ACF | Silicon晶振 | Si500D | 200MHz | 2.5V | ±150ppm |
| 510CBA100M000BAGR | Silicon晶振 | * | - | - | - |
| 510CBA125M000BAGR | Silicon晶振 | * | - | - | - |
| 510CBA25M0000BAGR | Silicon晶振 | * | - | - | - |
| 510GBA100M000BAGR | Silicon晶振 | * | - | - | - |
| 510GBA125M000BAGR | Silicon晶振 | * | - | - | - |
| 510GBA25M0000BAGR | Silicon晶振 | * | - | - | - |
| 510CBA100M000AAGR | Silicon晶振 | * | - | - | - |
| 510CBA125M000AAGR | Silicon晶振 | * | - | - | - |
| 510CBA25M0000AAGR | Silicon晶振 | * | - | - | - |
| 510GBA100M000AAGR | Silicon晶振 | * | - | - | - |
| 510GBA125M000AAGR | Silicon晶振 | * | - | - | - |
| 510CBA156M250BAGR | Silicon晶振 | * | - | - | - |
| 510GBA156M250BAGR | Silicon晶振 | * | - | - | - |
| 510CBA156M250AAGR | Silicon晶振 | * | - | - | - |
| 510GBA156M250AAGR | Silicon晶振 | * | - | - | - |
| 510CBA100M000BAG | Silicon晶振 | * | - | - | - |
晶體可能以與其基頻或泛音頻率無關(guān)的頻率振動。這種不需要的頻率被稱為雜散頻率。
在晶體設(shè)計和制造階段，可以通過改變晶片尺寸、電極圖案設(shè)計和調(diào)整晶片上的金屬化來抑制雜散頻率的影響。
| 510CBA125M000BAG | Silicon晶振 | * | - | - | - |
| 510GBA100M000BAG | Silicon晶振 | * | - | - | - |
| 510GBA125M000BAG | Silicon晶振 | * | - | - | - |
| 510GBA25M0000BAG | Silicon晶振 | * | - | - | - |
| 510CBA100M000AAG | Silicon晶振 | * | - | - | - |
| 510CBA125M000AAG | Silicon晶振 | * | - | - | - |
| 510CBA25M0000AAG | Silicon晶振 | * | - | - | - |
| 510GBA100M000AAG | Silicon晶振 | * | - | - | - |
| 510GBA125M000AAG | Silicon晶振 | * | - | - | - |
| 510ABA100M000BAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510ABA125M000BAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000BAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000BAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510FBA100M000BAGR | Silicon晶振 | Si510 | 100MHz | 2.5V | ±25ppm |
| 510FBA125M000BAGR | Silicon晶振 | Si510 | 125MHz | 2.5V | ±25ppm |
| 511ABA100M000BAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511ABA125M000BAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511BBA100M000BAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511BBA125M000BAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000BAGR | Silicon晶振 | Si511 | 100MHz | 2.5V | ±25ppm |
| 511FBA125M000BAGR | Silicon晶振 | Si511 | 125MHz | 2.5V | ±25ppm |
| 510ABA106M250BAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 510BBA106M250BAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511ABA106M250BAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA106M250BAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA106M250BAGR | Silicon晶振 | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510ABA000149BAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510ABA74M2500BAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA000149BAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA74M2500BAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
當(dāng)雜散模式的信號電平與主模式一樣強時，振蕩器可能會在雜散模式而不是主模式上運行。這種現(xiàn)象稱為模式跳變。
雜散模式通常定義為對主模式的電阻比或dB抑制。為了避免大多數(shù)振蕩器的模式跳變，需要與主模式的電阻比為1.5或2.0。這大約相當(dāng)于主模式下的-3dB至-6dB信號抑制。
| 510FBA000149BAGR | Silicon晶振 | Si510 | 74.175824MHz | 2.5V | ±25ppm |
| 510FBA74M2500BAGR | Silicon晶振 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 511ABA000149BAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511ABA74M2500BAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511BBA000149BAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511BBA74M2500BAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511FBA000149BAGR | Silicon晶振 | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 511FBA74M2500BAGR | Silicon晶振 | Si511 | 74.25MHz | 2.5V | ±25ppm |
| 510CBA156M250BAG | Silicon晶振 | * | - | - | - |
| 510GBA156M250BAG | Silicon晶振 | * | - | - | - |
| 510CBA156M250AAG | Silicon晶振 | * | - | - | - |
| 510GBA156M250AAG | Silicon晶振 | * | - | - | - |
| 510ABA100M000AAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510ABA125M000AAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000AAGR | Silicon晶振 | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000AAGR | Silicon晶振 | Si510 | 125MHz | 3.3V | ±25ppm |
| 510FBA100M000AAGR | Silicon晶振 | Si510 | 100MHz | 2.5V | ±25ppm |
| 510FBA125M000AAGR | Silicon晶振 | Si510 | 125MHz | 2.5V | ±25ppm |
| 511ABA100M000AAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511ABA125M000AAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511BBA100M000AAGR | Silicon晶振 | Si511 | 100MHz | 3.3V | ±25ppm |
| 511BBA125M000AAGR | Silicon晶振 | Si511 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000AAGR | Silicon晶振 | Si511 | 100MHz | 2.5V | ±25ppm |
| 511FBA125M000AAGR | Silicon晶振 | Si511 | 125MHz | 2.5V | ±25ppm |
| 510ABA106M250AAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
為什么HC-49S晶體的拉力不如HC-49U晶體？
晶體的牽引能力通常與晶體坯上形成的電極尺寸有關(guān)。更大尺寸的晶體坯當(dāng)然可以容納更大的電極。HC-49S的毛坯尺寸比HC-49U小。
當(dāng)晶體與振蕩電路中給定的負載電容串聯(lián)放置時，較大的電極通常會提供更寬的頻率牽引范圍。
什么是負載電容（CL）？
晶體的作用是放置在振蕩電路中工作，以產(chǎn)生所需的振蕩頻率。當(dāng)晶體位于振蕩電路中時，它會在晶體的兩個端子引線處看到一個“負載電容”。這種負載電容是出現(xiàn)在或呈現(xiàn)給晶體的整個振蕩電路的等效電容效應(yīng)。
| 510BBA106M250AAGR | Silicon晶振 | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 510FBA106M250AAGR | Silicon晶振 | Si510 | 106.25MHz | 2.5V | ±25ppm |
| 511ABA106M250AAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA106M250AAGR | Silicon晶振 | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA106M250AAGR | Silicon晶振 | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510ABA000149AAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510ABA74M2500AAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 510BBA000149AAGR | Silicon晶振 | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA74M2500AAGR | Silicon晶振 | Si510 | 74.25MHz | 3.3V | ±25ppm |
| 510FBA000149AAGR | Silicon晶振 | Si510 | 74.175824MHz | 2.5V | ±25ppm |
| 510FBA74M2500AAGR | Silicon晶振 | Si510 | 74.25MHz | 2.5V | ±25ppm |
| 511ABA000149AAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511ABA74M2500AAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511BBA000149AAGR | Silicon晶振 | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 511BBA74M2500AAGR | Silicon晶振 | Si511 | 74.25MHz | 3.3V | ±25ppm |
| 511FBA000149AAGR | Silicon晶振 | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 511FBA74M2500AAGR | Silicon晶振 | Si511 | 74.25MHz | 2.5V | ±25ppm |
| 510ABA156M250BAGR | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250BAGR | Silicon晶振 | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511ABA156M250BAGR | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511BBA156M250BAGR | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250BAGR | Silicon晶振 | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510ABA155M520BAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA155M520BAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA155M520BAGR | Silicon晶振 | Si510 | 155.52MHz | 2.5V | ±25ppm |
| 511ABA155M520BAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511BBA155M520BAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511FBA148M500BAGR | Silicon晶振 | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 511FBA155M520BAGR | Silicon晶振 | Si511 | 155.52MHz | 2.5V | ±25ppm |
| 510ABA000110BAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
晶體的作用是放置在振蕩電路中工作，以產(chǎn)生所需的振蕩頻率。當(dāng)晶體位于振蕩電路中時，它會在晶體的兩個端子引線處看到一個“負載電容”。這種負載電容是出現(xiàn)在或呈現(xiàn)給晶體的整個振蕩電路的等效電容效應(yīng)。
| 510ABA148M500BAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510BBA000110BAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510BBA148M500BAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510FBA000110BAGR | Silicon晶振 | Si510 | 148.35165MHz | 2.5V | ±25ppm |
| 510FBA148M500BAGR | Silicon晶振 | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511ABA000110BAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511ABA148M500BAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA000110BAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511BBA148M500BAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511FBA000110BAGR | Silicon晶振 | Si511 | 148.35165MHz | 2.5V | ±25ppm |
| 510ABA156M250AAGR | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510BBA156M250AAGR | Silicon晶振 | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250AAGR | Silicon晶振 | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511BBA156M250AAGR | Silicon晶振 | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250AAGR | Silicon晶振 | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510ABA155M520AAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA155M520AAGR | Silicon晶振 | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA155M520AAGR | Silicon晶振 | Si510 | 155.52MHz | 2.5V | ±25ppm |
| 511ABA155M520AAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511BBA155M520AAGR | Silicon晶振 | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 511FBA155M520AAGR | Silicon晶振 | Si511 | 155.52MHz | 2.5V | ±25ppm |
| 510ABA000110AAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510ABA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510BBA000110AAGR | Silicon晶振 | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510BBA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510FBA000110AAGR | Silicon晶振 | Si510 | 148.35165MHz | 2.5V | ±25ppm |
| 510FBA148M500AAGR | Silicon晶振 | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511ABA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
| 511ABA148M500AAGR | Silicon晶振 | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA000110AAGR | Silicon晶振 | Si511 | 148.35165MHz | 3.3V | ±25ppm |
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